IT1700 View Datasheet(PDF) - Calogic, LLC
Part Name
Description
Manufacturer
IT1700 Datasheet PDF : 2 Pages
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CORPORATION
IT1700
ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL
BVDSS
PARAMETER
Drain to Source Breakdown Voltage
MIN MAX UNITS
TEST CONDITIONS
-40
V VGS = 0, ID = -10µA
BVSDS
Source to Drain Breakdown Voltage
-40
V VGS = 0, ID = -10µA
IGSS
Gate Leakage Current
(See note 2)
IDSS
IDSS (150oC)
Drain to Source Leakage Current
Drain to Source Leakage Current
ISDS
ISDS (150oC)
Source to Drain Leakage Current
Source to Drain Leakage Current
VGS(th)
Gate Threshold Voltage
200 pA
0.4
µA VGS = 0, VDS = -20V
400 pA
0.8 µA
-2 -5
V VGS = VDS, ID = -10µA
rDS(on)
Static Drain to Source "on" Resistance
400 ohms VGS = -10V, VDS = 0
IDS(on)
Drain to Source "on" Current
2
mA VGS = -10V, VDS = -15V
gfs
Forward Transconductance Common Source
2000 4000 µS VDS = -15V, ID = -10mA, f = 1kHz
Ciss
Small Signal, Short Circuit, Common Source,
Input Capacitance
5
pF
VDS = -15V, ID = -10mA
f = 1MHz (Note 3)
Crss
Small Signal, Short Circuit, Common Source,
Reverse Transfer Capacitance
1.2
pF
VDG = -15V, ID = 0
f = 1MHz (Note 3)
Coss
Small Signal, Short Circuit, Common Source,
Output Capacitance
3.5
pF
VDS = -15V, ID = -10mA
f = 1MHz (Note 3)
NOTES: 1. Device must not be tested at ±125V more than once nor longer than 300ms.
2. Actual gate current is immeasurable. Package suppliers are required to guarantee a package leakage of < 10pA.
External package leakage is the dominant mode which is sensitive to both transient and storage environment, which cannot be guaranteed.
3. For design reference only, not 100% tested.
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