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Part Name
Description
ZHCS2000(2000) View Datasheet(PDF) - Zetex => Diodes
Part Name
Description
Manufacturer
ZHCS2000
(Rev.:2000)
40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE
Zetex => Diodes
ZHCS2000 Datasheet PDF : 6 Pages
1
2
3
4
5
6
ZHCS2000
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
V
(BR)R
40
Voltage
V
I
R
=1mA
Forward Voltage
V
F
Reverse Current
I
R
Diode Capacitance
C
D
Reverse Recovery
t
rr
Time
290 325
340 385
380 445
420 500
485 615
420
160 300
50
5.5
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
mV I
F
=500mA*
mV I
F
=1000mA*
mV I
F
=1500mA*
mV I
F
=2000mA*
mV I
F
=3000mA*
mV I
F
=2000mA*,T
amb
=100
°
C*
µ
A V
R
=30V
pF f=1MHz,V
R
=25V
ns switched from
I
F
= 500mA to I
R
= 500mA
Measured at I
R
= 50mA
ISSUE 1 - DECEMBER 2000
4
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