Philips Semiconductors
NPN high-voltage transistors
Product specification
PN3439; PN3440
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 350 V).
APPLICATIONS
• Telephony and professional communication equipment.
PINNING
PIN
1
2
3
collector
base
emitter
DESCRIPTION
DESCRIPTION
NPN high-voltage transistor in a TO-92; SOT54 plastic
package.
handbook, halfpage1
2
3
1
2
3
MAM279
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
PN3439
PN3440
VCEO
collector-emitter voltage
PN3439
PN3440
ICM
peak collector current
Ptot
total power dissipation
hFE
DC current gain
PN3439
hFE
DC current gain
PN3440
fT
transition frequency
CONDITIONS
open emitter
open base
Tamb ≤ 25 °C
IC = 2 mA; VCE = 10 V
IC = 20 mA; VCE = 10 V
IC = 10 mA; VCE = 10 V; f = 100 MHz
MIN.
MAX.
UNIT
−
400
V
−
300
V
−
350
V
−
250
V
−
200
mA
−
500
mW
30
−
40
−
70
−
MHz
1997 Sep 04
2