PN3439 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PN3439 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN high-voltage transistors
Product specification
PN3439; PN3440
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
ICBO
IEBO
hFE
hFE
VCEsat
VBEsat
Cc
Ce
fT
collector cut-off current
IE = 0; VCB = 360 V
PN3439
−
collector cut-off current
IE = 0; VCB = 250 V
PN3440
−
emitter cut-off current
IC = 0; VEB = 5 V
−
DC current gain
IC = 2 mA; VCE = 10 V
PN3439
30
DC current gain
PN3440
IC = 20 mA; VCE = 10 V
40
collector-emitter saturation voltage IC = 50 mA; IB = 4 mA
−
base-emitter saturation voltage
IC = 50 mA; IB = 4 mA
−
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
emitter capacitance
IC = ic = 0; VEB = 5 V; f = 1 MHz
−
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz 70
MAX. UNIT
100
nA
100
nA
100
nA
−
−
500
mV
1.3
V
2
pF
20
pF
−
MHz
1997 Sep 04
4
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