HGTG20N60C3R View Datasheet(PDF) - Harris Semiconductor
Part Name
Description
Manufacturer
HGTG20N60C3R Datasheet PDF : 6 Pages
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HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC, Fig. 12 . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 440V, TJ = 150oC, RGE = 10Ω.
ALL TYPES
600
40
20
80
±20
±30
80A at 600V
164
1.32
100
-40 to 150
260
10
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
µs
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX
UNITS
Collector-Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V
600
-
-
V
Emitter-Collector Breakdown Voltage
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
BVECS
ICES
VCE(SAT)
VGE(TH)
IC = 10mA, VGE = 0V
VCE = BVCES
TC = 25oC
VCE = BVCES
TC = 150oC
IC = IC110,
VGE = 15V
TC = 25oC
TC = 150oC
IC = 250µA,
VCE = VGE
TC = 25oC
15
-
-
V
-
-
250
µA
-
-
3.0
mA
-
1.8
2.2
V
-
2.1
2.5
V
3.5
6.3
7.5
V
Gate-Emitter Leakage Current
Switching SOA (See Figure 12)
IGES
SSOA
VGE = ±20V
TJ = 150oC
RG = 10Ω
VGE = 15V
-
VCE(PK) = 600V
80
L = 1mH
-
±100
nA
-
-
A
Gate-Emitter Plateau Voltage
VGEP
IC = IC110, VCE = 0.5 BVCES
-
9.0
-
V
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-Off Voltage dv/dt (Note 3)
Turn-On Voltage dv/dt (Note 3)
Turn-On Energy (Note 4)
QG(ON)
tD(ON)I
tRI
tD(OFF)I
tFI
dVCE/dt
dVCE/dt
EON
IC = IC110,
VCE = 0.5 BVES
VGE = 15V
VGE = 20V
TJ = 150oC
ICE = IC110
VCE(PK) = 0.8 BVCES
VGE = 15V
RG = 10Ω
L = 1mH
Diode used in test circuit
RURP1560 at 150oC
-
87
110
nC
-
116
150
nC
-
34
-
ns
-
40
-
ns
-
390
500
ns
-
330
400
ns
-
1.3
-
V/ns
-
7.0
-
V/ns
-
2.3
-
mJ
Turn-Off Energy (Note 5)
Thermal Resistance
EOFF
RθJC
-
3.0
-
mJ
-
-
0.76
oC/W
NOTES:
3. dVCE/dt depends on the diode used and the temperature of the diode.
4. Turn-On Energy Loss (EON) includes diode losses and is defined as the integral of the instantaneous power loss starting at the leading
edge of the input pulse and ending at the
RisUaRboPu1t5o6n0edhioadlfethaet TvJal=ue15a0to1C5.0AoCd.ifferent
point where the collector
diode or temperature will
voltage
result in
equals VCE(ON). This value
a different EON. For example
of EON was
with diode at
obtained with a
TJ = 25oC EON
5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5-4
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