HIN209 View Datasheet(PDF) - Harris Semiconductor
Part Name
Description
Manufacturer
HIN209
Harris Semiconductor
HIN209 Datasheet PDF : 14 Pages
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HIN200 thru HIN213
Electrical Specifications Test Conditions: VCC = +5V ±10%, (VCC = +5V ±5% HIN200, HIN203, HIN205, HIN207); V+ = 9V to
13.2V, HIN201 and HIN209), C1-C4 = 0.1µF; TA = Operating Temperature Range (Continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Receiver Input High Threshold, VIN (L-H)
VCC
TA =
= 5V,
25oC
Active Mode
Shutdown Mode
HIN213 R4 and R5
-
1.7
2.4
V
-
1.5
2.4
V
Receiver Input Hysteresis, VHYST
VCC = 5V
No Hysteresis in Shutdown Mode
0.2
0.5
1.0
V
TTL/CMOS Receiver Output Voltage Low, VOL IOUT = 1.6mA
(HIN201-HIN203, IOUT = 3.2mA)
-
0.1
0.4
V
TTL/CMOS Receiver Output Voltage High, VOH IOUT = -1mA
3.5
4.6
-
V
Output Enable Time, tEN
HIN205, HIN206, HIN209, HIN211, HIN213
-
400
-
ns
Output Disable Time, tDIS
HIN205, HIN206, HIN209, HIN211, HIN213
-
200
-
ns
Transmit, Receive Propagation Delay, tPD
HIN213 SD = 0V, R4, R5
-
0.5
40
µs
HIN213 SD = VCC, R1 - R5
-
0.5
10
µs
HIN200 - HIN211
-
0.5
10
µs
Transmit Transition Region Slew Rate, SRT
RL = 3kΩ,
CL = 2500pF
Measured from
+3V to -3V or
-3V to +3V
(Note 1)
HIN200, HIN204 to
HIN211, HIN213
HIN201, HIN202,
HIN203
3
-
30
V/µs
3
-
30
V/µs
Output Resistance, ROUT
VCC = V+ = V- = 0V, VOUT = ±2V
300
-
-
Ω
RS-232 Output Short Circuit Current, ISC
TOUT Shorted to GND
-
±10
-
mA
TTL/CMOS Receiver Output Leakage
EN = VCC, EN = 0, 0V < ROUT < VCC
-
0.05
±10
µA
NOTE:
1. Guaranteed by design.
VCC
GND
VOLTAGE DOUBLER
S1
C1+
S2
+
- C1
S3
C1-
S4
RC
OSCILLATOR
VOLTAGE INVERTER
V+ = 2VCC S5
C2+
S6
+
- C3
VCC
GND
S7
+
- C2
C2-
S8
+
- C4
GND
V- = - (V+)
FIGURE 1. CHARGE PUMP
8-12
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