INA-12063-BLK View Datasheet(PDF) - HP => Agilent Technologies

Part Name

Description

Manufacturer

INA-12063-BLK

1.5 GHz Low Noise Self-Biased Transistor Amplifier

HP => Agilent Technologies 

To assist designers in optimizing

not only the immediate circuit

using the INA-12063, but to also

optimize and evaluate trade-offs

that affect a complete wireless

system, the standard deviation

(σ) is provided for many of the

Electrical Specifications param-

eters (at 25°C) in addition to the

mean. The standard deviation is a

measure of the variability about

the mean. It will be recalled that a

normal distribution is completely

described by the mean and

standard deviation.

Standard statistics tables or

calculations provide the probabil-

ity of a parameter falling between

any two values, usually symmetri-

cally located about the mean.

Referring to Figure 30 for ex-

ample, the probability of a

parameter being between ± 1σ is

68.3%; between ± 2σ is 95.4%; and

between ± 3σ is 99.7%.

68%

95%

99%

-3σ -2σ -1σ Mean +1σ +2σ +3σ

(µ), typ

Parameter Value

Figure 30. Normal Distribution.

Phase Reference Planes

The positions of the reference

planes used to specify S-param-

eters and Noise Parameters for

the INA-12063 are shown in

Figure 31. As seen in the illustra-

tion, the reference planes are

located at the point where the

package leads contact the test

circuit.

REFERENCE

PLANES

TEST CIRCUIT

Figure 31. Phase Reference Planes.

discharges. Electrostatic charges

as high as several thousand volts

(which readily accumulate on the

human body and on test equip-

ment) can discharge without

detection and may result in

degradation in performance,

reliability, or failure.

Test Circuits

The test circuit shown in Fig-

ure␣ 32 is used for 100% testing of

the guaranteed RF and DC

parameters that are shown in the

Table of Electrical Specifications.

+3 V

RF

INPUT

5.6 kΩ

8.2 nH

+3 V

10 nF 100 pF

1 nF

500 Ω

+3 V

1 nF

8.2 nH

RF

OUTPUT

2.2 pF

Figure 32. 900 MHz Test Circuit.

Electronic devices may be

subjected to ESD damage in any

of the following areas:

• Storage and handling

• Inspection and testing

• Assembly

• In-circuit use

The INA-12063 is a ESD Class 1

device. Therefore, proper ESD

precautions are recommended

when handling, inspecting,

testing, assembling, and using

these devices to avoid damage.

The test circuits in Figures 32 and

33 were used to generate the

characterization data and perfor-

mance curves for 900 MHz and

250 MHz.

+3 V

RF

INPUT

16 kΩ

180 nH

150 Ω

5.6 pF

+3 V

10 nF 100 pF

1 nF

330 Ω

+3 V

1 nF

39 nH

RF

OUTPUT

5.6 pF

Figure 33. 250 MHz Test Circuit.

Electrostatic Sensitivity

RFICs are electro-

static discharge

(ESD) sensitive

devices. Although the

INA-12063 is robust in design,

permanent damage may occur to

these devices if they are sub-

jected to high energy electrostatic

The in-use aspect of potential

ESD damage is sometimes over-

looked. One such example of

possible damage is in the use of

an ESD sensitive device as the

front-end LNA stage in personal

communication equipment, such

as cellular telephones, PCS, or RF

modems.

The input to receiver LNAs are

frequently connected to external

antennas that are subject to

human contact and exposure to

other potentially damaging levels

of ESD. If this type of condition

exists, some type of circuit

protection may be needed. One

simple method of preventing ESD

damage is to add a DC return

path (e.g., a shunt inductor) to

the input of the receiver. This

type of protection may be inte-

grated into other parts of the

receiver front end, such as in a

T/R switch, filter, or the input

matching network to the LNA.

6-135

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