Thermal Characteristics
Package
TO-92
ID (continuous)*
120mA
ID (pulsed)
500mA
Power Dissipation
@ TC = 25°C
1.0W
θjc
°C/W
125
TO-220
500mA
500mA
15.0W
8.3
TO-243AA
170mA
500mA
1.6W (TA = 25°)†
15
*
†
ID (continuous) is
Mounted on FR5
limited
board,
by max
25mm x
rated Tj.
25mm x
1.57mm.
Significant
PD
increase
possible
on
ceramic
substrate.
TA = 25°C
DN2535/DN2540
θja
°C/W
170
70
78†
IDR*
120mA
500mA
170mA
IDRM
500mA
500mA
500mA
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSX
Parameter
Drain-to-Source
Breakdown Voltage
Min Typ Max Unit
DN2540 400
V
DN2535 350
VGS(OFF)
∆VGS(OFF)
IGSS
ID(OFF)
Gate-to-Source OFF Voltage
Change in VGS(OFF) with Temperature
Gate Body Leakage Current
Drain-to-Source Leakage Current
–1.5
–3.5
V
4.5 mV/°C
100
nA
10
µA
1
mA
IDSS
RDS(ON)
Saturated Drain-to-Source Current
Static Drain-to-Source
ON-State Resistance
150
17
25
∆RDS(ON) Change in RDS(ON) with Temperature
1.1
GFS
Forward Transconductance
325
CISS
Input Capacitance
200 300
COSS
Common Source Output Capacitance
12
30
CRSS
Reverse Transfer Capacitance
1
5
td(ON)
Turn-ON Delay Time
10
tr
Rise Time
15
td(OFF)
Turn-OFF Delay Time
15
tf
Fall Time
20
VSD
Diode Forward Voltage Drop
1.8
trr
Reverse Recovery Time
800
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
mA
Ω
%/°C
m
pF
ns
V
ns
Conditions
VGS = -5V, ID = 100µA
VDS = 25V, ID= 10µA
VDS = 25V, ID= 10µA
VGS = ± 20V, VDS = 0V
VGS = -10V, VDS = Max Rating
VGS = -10V, VDS = 0.8 Max Rating
TA = 125°C
VGS = 0V, VDS = 25V
VGS = 0V, ID = 120mA
VGS = 0V, ID = 120mA
ID = 100mA, VDS = 10V
VGS = -10V, VDS = 25V
f = 1 MHz
VDD = 25V,
ID = 150mA,
RGEN = 25Ω
VGS = -10V, ISD = 120mA
VGS = -10V, ISD = 1A
Switching Waveforms and Test Circuit
VDD
0V
INPUT
-10V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
2
PULSE
GENERATOR
Rgen
INPUT
RL
OUTPUT
D.U.T.