HM5164165F Series, HM5165165F Series
DC Characteristics (HM5165165F Series)
EParameter
Operating current*1, *2
Standby current
HM5165165F
-5
Symbol Min Max
I CC1
ā 140
I CC2
ā2
OL ā 0.5
-6
Min
ā
ā
ā
Max
120
2
0.5
Unit Test conditions
mA tRC = min
mA TTL interface
RAS, UCAS, LCAS = VIH
Dout = High-Z
mA CMOS interface
RAS, UCAS,
LCAS ā„ VCC ā 0.2 V
Dout = High-Z
Standby current
(L-version)
I CC2
ā
300 ā
300 ĀµA CMOS interface
RAS, UCAS,
LCAS ā„ VCC ā 0.2 V
Dout = High-Z
RAS-only refresh current*2
I CC3
P Standby current*1
I CC5
ā
140 ā
120 mA tRC = min
ā5
ā
5
mA RAS = VIH
UCAS, LCAS = VIL
Dout = enable
CAS-before-RAS refresh
r current
I CC6
ā
140 ā
120 mA tRC = min
o EDO page mode current*1, *3 ICC7
ā
120 ā
110 mA RAS = VIL , CAS cycle,
tHPC = tHPC min
Battery backup current*4
I CC10
ā
1.2 ā
1.2 mA CMOS interface
(Standby with CBR refresh)
Dout = High-Z
d (L-version)
CBR refresh: tRC = 15.6 Āµs
tRAS ā¤ 0.3 Āµs
Self refresh mode current
(L-version)
I CC11
ā
500 ā
500 ĀµA CMOS interface
RAS, UCAS, LCAS ā¤ 0.2 V
Dout = High-Z
u Input leakage current
Output leakage current
I LI
ā5 5
ā5
5
ĀµA 0 V ā¤ Vin ā¤ VCC + 0.3 V
I LO
ā5 5
ā5
5
ĀµA 0 V ā¤ Vout ā¤ VCC
Dout = disable
c Output high voltage
VOH
2.4
VCC
2.4
VCC
V
High Iout = ā2 mA
Output low voltage
VOL
0
0.4 0
0.4 V Low Iout = 2 mA
t Notes: 1. ICC depends on output load condition when the device is selected. ICC max is specified at the output
open condition.
2. Address can be changed once or less while RAS = VIL.
3. Measured with one sequential address change per EDO cycle, tHPC.
4. VIH ā„ VCC ā 0.2 V, 0 V ā¤ VIL ā¤ 0.2 V.
Data Sheet E0099H10
10