HT66F016(2012) View Datasheet(PDF) - Holtek Semiconductor
Part Name
Description
Manufacturer
HT66F016 Datasheet PDF : 116 Pages
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HT66F016/HT66F017/HT68F016/HT68F017
W r ite r P in s
VDD
IC P M S
IC P D A
IC P C K
VSS
M CU
P r o g r a m m in g P in s
VDD
PA7
PA0
PA2
VSS
B ank 0
80H
B ank 1
G e n e ra l
P u rp o s e
D a ta M e m o ry
U nused
nFH
N o te : G e n e ra l P u rp o s e D a ta M e m o ry s p a c e :
8 0 H ~ B F H fo r H T 6 6 F 0 1 6 /H T 6 8 F 0 1 6
8 0 H ~ F F H fo r H T 6 6 F 0 1 7 /H T 6 8 F 0 1 7
General Purpose Data Memory
***
Note:
T o o th e r C ir c u it
* may be resistor or capacitor. The resistance
of * must be greater than 1kW or the capacitance
of * must be less than 1nF.
RAM Data Memory
The Data Memory is a volatile area of 8-bit wide RAM in-
ternal memory and is the location where temporary in-
formation is stored.
The second area of Data Memory is known as the Gen-
eral Purpose Data Memory, which is reserved for gen-
eral purpose use. All locations within this area are read
and write accessible under program control.
The overall Data Memory is subdivided into two banks
for all the devices. The Special Purpose Data Memory
registers are accessible in all banks, with the exception
of the EEC register at address 40H, which is only acces-
sible in Bank 1. Switching between the different Data
Memory banks is achieved by setting the Bank Pointer
to the correct value. The start address of the Data Mem-
ory for all devices is the address 00H.
Structure
Divided into two sections, the first of these is an area of
RAM, known as the Special Function Data Memory. Here
are located registers which are necessary for correct op-
eration of the device. Many of these registers can be read
from and written to directly under program control, how-
ever, some remain protected from user manipulation.
Device Capacity Bank 0
Bank 1
HT66F016
HT68F016
64´8
80H~BFH Unimplemented
HT66F017
HT68F017
128´8
80H~FFH Unimplemented
General Purpose Data Memory Structure
Rev. 1.00
21
May 14, 2012
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