HYB3117805BSJ-50-60 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

HYB3117805BSJ-50-60

2M × 8-Bit Dynamic RAM 2k Refresh (Hyper Page Mode-EDO)

Siemens AG 

HYB 5(3)117805/BSJ-50/-60

2M × 8 EDO-DRAM

AC Characteristics (cont’d) 5, 6

TA = 0 to 70 °C, VCC = 5 V ± 10 % / VCC = 3.3 V ± 0.3 V, tT = 2 ns

Parameter

Symbol

Limit Values

Unit Note

-50

-60

min. max. min. max.

Data to CAS low delay

Data to OE low delay

CAS high to data delay

OE high to data delay

tDZC

tDZO

tCDD

tODD

0–

0–

10 –

10 –

0–

0–

13 –

13 –

ns 13

ns 13

ns 14

ns 14

Write Cycle

Write command hold time

Write command pulse width

Write command setup time

Write command to RAS lead time

Write command to CAS lead time

Data setup time

Data hold time

tWCH

8

–

10 –

ns

tWP

8 – 10 – ns

tWCS

0

–

0

–

ns 15

tRWL

8

–

10 –

ns

tCWL

8

–

10 –

ns

tDS

0

–

0

–

ns 16

tDH

8

–

10 –

ns 16

Read-Modify-Write Cycle

Read-write cycle time

RAS to WE delay time

CAS to WE delay time

Column address to WE delay time

OE command hold time

tRWC

tRWD

tCWD

tAWD

tOEH

113 –

64 –

27 –

39 –

10 –

138 –

77 –

32 –

47 –

13 –

ns

ns 15

ns 15

ns 15

ns

Hyper Page Mode (EDO) Cycle

Hyper page mode (EDO) cycle time

CAS precharge time

Access time from CAS precharge

Output data hold time

RAS pulse width in EDO mode

CAS precharge to RAS delay

OE setup time prior to CAS

tHPC

tCP

tCPA

tCOH

tRAS

tRHCP

tOES

20 – 25 – ns

8 – 10 – ns

–

27 –

32 ns 7

5 – 5 – ns

50 200k 60 200k ns

27 – 32 – ns

5–5–5

Semiconductor Group

7

1998-10-01

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