Q67100-Q2075 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

Q67100-Q2075

4M × 72-Bit Dynamic RAM Module (ECC - Module )

Siemens AG 

HYM724000/10GS-50/-60

4M x 72 ECC- Module

AC Characteristics (cont’d)(note: 5,6,7,8)

TA = 0 to 70 °C,VCC = 5.0 ± 10 %

Parameter

Symbol

-50

min. max.

CAS delay time from Din

Data to OE low delay

CAS high to data delay

OE high to data delay

tDZC

tDZO

tCDD

tODD

0

–

0

–

18 –

18 –

-60

min. max.

0

–

0

–

20 –

20 –

Unit Note

ns 18

ns 18

ns 9,19

ns 9,19

Write Cycle

Write command hold time

Write command pulse width

Write command setup time

Write command to RAS lead time

Write command to CAS lead time

Data setup time

Data hold time

tWCH

tWP

tWCS

tRWL

tCWL

tDS

tDH

13 –

8

–

2

–

18 –

13 –

-2

–

15 –

15 –

10 –

2

–

20 –

15 –

-2

–

15 –

ns 9

ns

ns 11,20

ns 9

ns

ns 10,21

ns 9,21

Read-Modify-Write Cycle

Read-write cycle time

tRWC

131 –

RAS to WE delay time

tRWD

70 –

CAS to WE delay time

tCWD

33 –

Column address to WE delay time

tAWD

45 –

OE command hold time

tOEH

11 –

155 –

82 –

37 –

52 –

13 –

ns 9

ns 11,21

ns 11,21

ns 11,21

ns 10

Fast Page Mode Cycle

Fast page mode cycle time

CAS precharge time

Access time from CAS precharge

RAS pulse width

CAS precharge to RAS Delay

tPC

35 –

40 –

ns

tCP

10 –

10 –

ns

tCPA

–

35 –

40

ns 9,13

tRAS

50 200k 60 200k ns

tRHCP

35

–

40 –

ns 9

Semiconductor Group

8

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