DSF2054SF41 View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

Manufacturer

DSF2054SF41

Fast Recovery Diode

Dynex Semiconductor 

DSF20545SF

SURGE RATINGS

Symbol

Parameter

I

Surge (non-repetitive) forward current

FSM

I2t

I2t for fusing

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

I

Surge (non-repetitive) forward current

FSM

I2t

I2t for fusing

Conditions

10ms half sine; with 0% VRRM, Tj = 150oC

10ms half sine; with 50% VRRM, Tj = 150oC

10ms half sine; with 100% VRRM, Tj = 150oC

Max. Units

16

kA

1280 x 103 A2s

12.8

kA

819.2 X 103 A2s

-

kA

-

A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

R

th(j-c)

Thermal resistance - junction to case

Rth(c-h) Thermal resistance - case to heatsink

T

vj

Virtual junction temperature

Tstg

Storage temperature range

-

Clamping force

CHARACTERISTICS

Symbol

Parameter

VFM

Forward voltage

IRRM

Peak reverse current

t

rr

Reverse recovery time

QRA1

Recovered charge (50% chord)

IRM

Reverse recovery current

K

Soft factor

V

TO

rT

VFRM

2/8

Threshold voltage

Slope resistance

Forward recovery voltage

Conditions

Double side cooled

Single side cooled

Clamping force 15kN

with mounting compound

dc

Anode dc

Cathode dc

Double side

Single side

On-state (conducting)

Min. Max. Units

- 0.022 oC/W

-

0.032 oC/W

- 0.032 oC/W

- 0.004 oC/W

- 0.008 oC/W

-

150

oC

-55 150

oC

17.5 21.5 kN

Conditions

At 1800A peak, Tcase = 25oC

At VRRM, Tcase = 150oC

IF = 1000A, diRR/dt = 100A/µs

Tcase = 150oC, VR = 100V

At Tvj = 150oC

At Tvj = 150oC

di/dt = 1000A/µs, Tj = 125oC

Typ. Max. Units

-

2.1

V

-

50 mA

-

7.0 µs

-

1250 µC

-

400

A

1.8

-

-

-

1.36 V

-

0.47 mΩ

-

160

V

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