BC556 View Datasheet(PDF) - Boca Semiconductor
Part Name
Description
Manufacturer
BC556 Datasheet PDF : 3 Pages
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ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) BC556-558
DESCRIPTION
SYMBOL TEST CONDITION
VALUE
DC Current Gain
hFE
IC=10uA,VCE=5V
A
typ90
B
typ150
C
typ270
IC=2mA,VCE=5V
BC556 75-475
BC557,8 75-800
A
110-220
B
200-450
C
420-800
IC=100mA,VCE=5V
A
typ120
B
typ200
C
typ400
Collector Emitter Saturation Voltage VCE(Sat) IC=10mA,IB=0.5mA
<0.30
IC=100mA,IB=5mA
<0.65
Base Emitter Saturation Voltage
VBE(Sat) IC=10mA,IB=0.5mA
typ0.70
IC=100mA,IB=5mA
typ0.90
Base Emitter on Voltage
VBE(on) IC=2mA,VCE=5V
0.55-0.70
IC=10mA,VCE=5V
<0.82
DYNAMIC CHARACTERISTICS
Transistors Frequency
ft
IC=10mA, VCE=5V
typ150
f=100MHz
Collector out-put Capacitance
Ccbo
VCB=10V, f=1MHz
<6.0
Emitter Input Capacitance
Cib
VEB=0.5V, f=1MHz
typ9.0
Noise Figure
NF
IC=0.2mA, VCE=5V
<10
Rs=2kohm, f=1kHZ
B=200Hz
Small Signal Current Gain
Input Impedance
Voltage Feedback Ratio
Out put Adimttance
ALL f=1KHz
hfe
IC=2mA, VCE=5V
A
typ220
B
typ330
C
typ600
hie
IC=2mA, VCE=5V
A
1.6-4.5
B
3.2-8.5
C
6.0-15
hre
IC=2mA, VCE=5V
A
typ1.5
B
typ2.0
C
typ3.0
hoe
IC=2mA, VCE=5V
A
<30
B
<60
C
<110
UNITS
V
V
V
V
V
V
MHz
pF
pF
dB
khoms
X`10-4
umhos
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
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