IDT71256 View Datasheet(PDF) - Integrated Device Technology

Part Name

Description

Manufacturer

IDT71256

BiCMOS StaticRAM 240K (16K x 15-BIT) CACHE-TAG RAM For the PentiumO Processor

Integrated Device Technology 

IDT71256 S/L

CMOS STATIC RAM 256K (32K x 8-BIT)

AC TEST CONDITIONS

Input Pulse Levels

Input Rise/Fall Times

Input Timing Reference Levels

Output Reference Levels

AC Test Load

GND to 3.0V

5ns

1.5V

1.5V

See Figures 1 and 2

2946 tbl 08

5V

DATAOUT

255Ω

480Ω

30pF*

MILITARY AND COMMERCIAL TEMPERATURE RANGES

DATAOUT

255Ω

5V

480Ω

5pF*

2946 drw 04

2946 drw 05

Figure 1. AC Test Load

Figure 2. AC Test Load

(for tCLZ, tOLZ, tCHZ, tOHZ, tOW, tWHZ)

*Includes scope and jig capacitances

DC ELECTRICAL CHARACTERISTICS

VCC = 5.0V ± 10%

Symbol

|ILI|

|ILO|

VOL

VOH

Parameter

Input Leakage Current

Output Leakage Current

Output Low Voltage

Output High Voltage

Test Condition

VCC = Max.,

VIN = GND to VCC

VCC = Max., CS = VIH,

VOUT = GND to VCC

IOL = 8mA, VCC = Min.

IOL = 10mA, VCC = Min.

IOH = –4mA, VCC = Min.

MIL.

COM’L.

MIL.

COM’L.

IDT71256S

Min. Typ. Max.

—

—

10

—

—

5

—

—

10

—

—

5

— 0.4

—

— 0.5

2.4 —

—

IDT71256L

Min. Typ. Max. Unit

—

—

5

µA

—

—

2

—

—

5

µA

—

—

2

—

—

0.4

V

—

—

0.5

2.4 —

—

V

2946 tbl 09

DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES

(L Version Only) VLC = 0.2V, VHC = VCC – 0.2V

Typ. (1)

VCC @

Max.

VCC @

Symbol

Parameter

Test Condition

Min.

2.0v

3.0V

2.0V

3.0V

VDR

VCC for Data Retention

—

2.0

—

—

—

—

ICCDR

Data Retention Current

MIL.

—

—

COM’L. —

—

tCDR

Chip Deselect to Data

Retention Time

CS ≥ VHC

0

—

tR(3)

Operation Recovery Time

tRC(2)

—

—

500

800

—

120

200

—

—

—

—

—

—

NOTES:

1. TA = +25°C.

2. tRC = Read Cycle Time.

3. This parameter is guaranteed, but not tested.

Unit

V

µA

ns

ns

2946 tbl 10

7.2

4

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