IDT71V432 View Datasheet(PDF) - Integrated Device Technology
Part Name
Description
Manufacturer
IDT71V432
Integrated Device Technology
IDT71V432 Datasheet PDF : 18 Pages
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IDT71V432, 32K x 32 CacheRAM
3.3V Synchronous SRAM with Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings(1)
Symbol
VTERM(2)
VTERM(3)
TA
Rating
Terminal Voltage with
Respect to GND
Terminal Voltage with
Respect to GND
Operating Temperature
Value
Unit
–0.5 to +4.6
V
–0.5 to VDD+0.5 V
0 to +70
oC
Recommended Operating
Temperature and Supply Voltage
Grade
Temperature
VSS
VDD
Commercial
0°C to +70°C
0V
3.3V+10/-5%
Industrial
–40°C to +85°C
0V
3.3V+10/-5%
3104 tbl 03
TBIAS
Temperature Under Bias
–55 to +125
oC
TSTG
Storage Temperature
–55 to +125
oC
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
50
mA
NOTES:
3104 tbl 05
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VDD and Input terminals only.
3. I/O terminals.
Recommended DC Operating
Conditions
Symbol Parameter
Min. Typ.
Max. Unit
VDD Supply Voltage
3.135 3.3
3.63
V
VSS
Ground
0
0
0
V
VIH
Input High Voltage — Inputs 2.0 —
4.6(2)
V
VIH
Input High Voltage — I/O
2.0 — VDD+0.3 V
VIL
Input Low Voltage
–0.5(1) —
0.8
V
NOTES:
3104 tbl 04
1. VIL (min) = –1.0V for pulse width less than tCYC/2, once per cycle.
2. VIH (max) = 6.0V for pulse width less than tCYC/2, once per cycle.
Capacitance
(TA = +25°C, f = 1.0MHz, TQFP package)
Symbol
Parameter(1)
Conditions Max. Unit
CIN
Input Capacitance
VIN = 3dV
6 pF
CI/O
I/O Capacitance
VOUT = 3dV
7 pF
3104 tbl 06
NOTE:
1. This parameter is guaranteed by device characterization, but not production
tested.
6.442
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