ILX521 View Datasheet(PDF) - Sony Semiconductor

Part Name

Description

Manufacturer

ILX521

256-pixel CCD Linear Image Sensor (B/W)

Sony Semiconductor 

ILX521AA

Electrooptical Characteristics

(Ta = 25°C, VDD = 5V, Data rate = 1MHz, Without S/H mode, Light source = 3200K,

IR cut filter CM-500S (t = 1mm))

Item

Symbol Min.

Typ. Max.

Unit Remarks

Sensitivity

R

13.3

19.0

24.7 V/(lx · s) Note 1

Sensitivity nonuniformity PRNU

—

5.0

12.0

%

Note 2

Saturation output voltage VSAT

0.6

0.8

—

V

—

Dark voltage average

VDRK

—

0.3

2.0

mV Note 3

Dark signal nonuniformity DSNU

—

0.5

3.0

mV Note 3

Image lag

IL

—

0.02

—

%

Note 4

Dynamic range

DR

—

2666

—

Note 5

Saturation exposure

SE

—

0.042

—

lx · s Note 6

Current consumption

IVDD

—

5.0

12.0

mA

—

Total transfer efficiency TTE

92.0

98.0

—

%

—

Output impedance

ZO

—

350

—

Ω

—

Offset level

VOS

—

3.8

—

V

Note 7

Note)

1. For the sensitivity test light is applied with a uniform intensity of illumination.

2. PRNU is defined as indicated below. Ray incidence conditions are the same as for Note 1.

PRNU =

(VMAX – VMIN)/2

VAVE

× 100 [%]

The maximum output of the 256 pixels is set to VMAX, the minimum output to VMIN and the average output to

VAVE.

3. Integration time is 10ms.

 4. VOUT = 500mV.

5. DR = VSAT/VDRK

When optical integration time is shorter, the dynamic range sets wider because dark output voltage is in

proportion to optical integration time.

  6.SE=VSAT/R1

7. Vos is defined as indicated below.

, Vout

D8

D9

D10

D11

D12

S1

VOS

GND

–3–

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