ILX751 View Datasheet(PDF) - Sony Semiconductor

Part Name

Description

Manufacturer

ILX751

2048-pixel CCD Linear Sensor (B/W)

Sony Semiconductor 

ILX751B

Electro-optical Characteristics

(Ta = 25°C, VDD1 = 9V, VDD2 = 5V, Clock frequency = 1MHz, Light source = 3200K, IR cut filter: CM-500S (t = 1.0mm))

Item

Sensitivity

Sensitivity nonuniformity

Saturation output voltage

Dark voltage average

Dark signal nonuniformity

Image lag

Dynamic range

Saturation exposure

9V supply current

5V supply current

Total transfer efficiency

Output impedance

Offset level

Shutter lag

Symbol

R

PRNU

VSAT

VDRK

DSNU

IL

DR

SE

IVDD1

IVDD2

TTE

ZO

VOS

SHUT

Min.

(30)

—

(1.5)

—

—

—

—

—

—

—

92.0

—

—

0

Typ.

40

2.0

1.8

0.3

0.5

0.02

6000

0.045

4.0

1.8

97.0

600

4.0

1.0

Max.

(50)

(8.0)

—

(2.0)

(3.0)

—

—

—

(8.0)

(5.0)

—

—

—

(5.0)

Unit

V/(lx · s)

%

V

mV

mV

%

—

lx · s

mA

mA

%

Ω

V

%

Remarks

Note 1

Note 2

—

Note 3

Note 3

Note 4

Note 5

Note 6

—

—

—

—

Note 7

Note 8

Note)

1. For the sensitivity test light is applied with a uniform intensity of illumination.

2. PRNU is defined as indicated below. Ray incidence conditions are the same as for Note 1.

PRNU = (VMAX – VMIN)/2 × 100 [%]

VAVE

The maximum output is set to VMAX, the minimum output to VMIN and the average output to VAVE.

3. Integration time is 10ms.

4. VOUT = 500mV

VSAT

5. DR =

VDRK

When optical accumulated time is shorter, the dynamic range gets wider because dark voltage is in

proportion to optical accumulated time.

VSAT

6. SE =

R

7. VOS is defined as indicated below.

D31

D32

D33

S1

OS

VOS

GND

–3–

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