EMB11 View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

Manufacturer

EMB11

General purpose (dual digital transistors)

ROHM Semiconductor 

Transistors

EMB11 / UMB11N / IMB11A

zElectrical characteristics (Ta = 25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Input voltage

VI (off)

−

− −0.5

VCC= −5V, IO= −100µA

V

VI (on) −3.0

−

−

VO= −0.3V, IO= −10mA

Output voltage

VO (on)

−

−0.1 −0.3

V IO/II= −10mA/ −0.5mA

Input current

II

−

− −0.88 mA VI= −5V

Output current

IO (off)

−

− −0.5 µA VCC= −50V, VI=0V

DC current gain

Transition frequency

GI

30

−

−

− VO= −5V, IO= −5mA

fT

−

250

−

MHz VCE= −10V, IE=5mA, f=100MHz

∗

Input resistance

R1

7

10 13

kΩ

−

Resistance ratio

R2 / R1 0.8

1 1.2

−

−

∗ Transition frequency of the device

zPackaging specifications

Package

Code

Type

Basic ordering

unit (pieces)

EMB11

UMB11N

IMB11A

T2R

8000

Taping

TN

3000

T110

3000

zElectrical characteristic curves

−100

VO=−0.3V

−50

−20

−10

−5

−2

−1

−500m

Ta=−40˚C

25˚C

100˚C

−200m

−100m

−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m

OUTPUT CURRENT : IO (A)

Fig.1 Input voltage vs. output current

(ON characteristics)

−1

−500m

−200m

−100m

−50m

Ta=100˚C

25˚C

−40˚C

lO/lI =20

−20m

−10m

−5m

−-2m

−1m

−100µ −200µ −500µ −1m −2m

−5m −10m −20m −50m−100m

OUTPUT CURRENT : IO (A)

Fig.4 Output voltage vs. output

current

−10m

−5m

−2m

−1m

−500µ

Ta=100˚C

25˚C

−40˚C

VCC=−5V

−200µ

−100µ

−50µ

−20µ

−10µ

−5µ

−2µ

−1µ

0

−0.5

−1

−1.5

−2

−2.5

−3

INPUT VOLTAGE : VI (off) (V)

Fig.2 Output current vs. input voltage

(OFF characteristics)

1k

VO=−5V

500

Ta=100˚C

25˚C

200

−40˚C

100

50

20

10

5

2

1

−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m

OUTPUT CURRENT : IO (A)

Fig.3 DC current gain vs. output

current

Rev.A

2/2

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