IXFN80N48 View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
Manufacturer
IXFN80N48 Datasheet PDF : 2 Pages
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IXFN 80N48
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 15 V; ID = 0.5 ID25, pulse test
50
70
S
9890
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
1750
pF
460
pF
61
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
70
ns
RG = 1 W (External),
102
ns
27
ns
380
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
80
nC
173
nC
0.18 K/W
0.05
K/W
Source-Drain Diode
Symbol
IS
Test Conditions
VGS = 0 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
80 A
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
320 A
1.3 V
trr
IF = 50A, -di/dt = 100 A/ms, VR = 100 V
QRM
IRM
250 ns
1.2
mC
8
A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min.
Max.
31.50
7.80
31.88
8.20
4.09
4.29
4.09
4.29
4.09
14.91
4.29
15.11
30.12
38.00
30.30
38.23
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.42
4.72
4.85
24.59
-0.05
25.07
0.1
Inches
Min.
Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.496
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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