019N06L View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

019N06L

OptiMOS™3 Power-Transistor

Infineon Technologies 

IPB019N06L3 G

Parameter

Symbol Conditions

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance,

junction - ambient

R thJC

R thJA

minimal footprint

6 cm² cooling area5)

min.

Values

typ.

Unit

max.

-

-

0.6 K/W

-

-

62

-

-

40

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

60

-

-V

Gate threshold voltage

V GS(th) V DS=V GS, I D=196 µA

1.2

1.7

2.2

Zero gate voltage drain current

I DSS

V DS=60 V, V GS=0 V,

T j=25 °C

-

0.1

3 µA

V DS=60 V, V GS=0 V,

T j=125 °C

-

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

Drain-source on-state resistance

R DS(on) V GS=10 V, I D=100 A

-

30

300

1

100 nA

1.6

1.9 mΩ

V GS=4.5 V, I D=50 A

-

2.1

3

Gate resistance

Transconductance

RG

-

1.3

g fs

|V DS|>2|I D|R DS(on)max,

I D=100 A

113

225

-Ω

-S

5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 2.2

page 2

2009-11-16

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