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Part Name
Description
IPB09N03LAG View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
IPB09N03LAG
Power-Transistor
Infineon Technologies
IPB09N03LAG Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
13 Avalanche characteristics
I
AS
=f(
t
AV
);
R
GS
=25
Ω
parameter: T
j(start)
100
150 °C
100 °C
14 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=25 A pulsed
parameter:
V
DD
12
IPB09N03LA G
10
25 °C
8
15 V
5V
20 V
10
6
4
2
1
0
1
10
100
1000
0
t
AV
[µs]
10
20
Q
gate
[nC]
15 Drain-source breakdown voltage
V
BR(DSS)
=f(
T
j
);
I
D
=1 mA
16 Gate charge waveforms
Rev. 1.6
29
V
GS
28
27
26
25
24
V
g s(th)
23
22
21
20
-60
-20
20
60 100 140 180
T
j
[°C]
Q
g(th)
Q
gs
page 7
Q
g
Q
sw
Q
gd
Q
gate
2006-05-11
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