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IRAMS10UP60B View Datasheet(PDF) - International Rectifier

Part Name
Description
Manufacturer
IRAMS10UP60B Datasheet PDF : 17 Pages
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IRAMS10UP60B
Thermal and Mechanical Characteristics
Symbol
Parameter
Min Typ
Rth(J-C)
Rth(J-C)
Rth(C-S)
CD
Thermal resistance, per IGBT
Thermal resistance, per Diode
Thermal resistance, C-S
Creepage Distance
---
4.2
---
5.5
---
0.1
3.2
---
Max
4.7
6.5
---
---
Units Conditions
Flat, greased surface. Heatsink
°C/W compound thermal conductivity
1W/mK
mm See outline Drawings
Internal Current Sensing Resistor - Shunt Characteristics
Symbol
Parameter
Min Typ Max Units Conditions
RShunt
Resistance
33.0 33.3 33.7 mTC = 25°C
TCoeff
Temperature Coefficient
0
---
200 ppm/°C
PShunt
Power Dissipation
---
---
2.2
W -40°C< TC <100°C
TRange
Temperature Range
-40
---
125
°C
Internal NTC - Thermistor Characteristics
Parameter Definition
Min Typ
R25
Resistance
R125
Resistance
97
100
2.25 2.52
B
B-constant (25-50°C)
4165 4250
Temperature Range
-40
Typ. Dissipation constant
1
Max Units Conditions
103
2.80
4335
125
kTC = 25°C
kTC = 125°C
k
R2 = R1e [B(1/T2 - 1/T1)]
°C
mW/°C TC = 25°C
Input-Output Logic Level Table
V+
Hin1,2,3
(15,16,17)
Lin1,2,3
(18,19,20)
Ho
IC
Driver
Lo
U,V,W
(8,5,2)
FLT- EN
1
1
1
1
0
ITRIP HIN1,2,3 LIN1,2,3 U,V,W
0
0
1
V+
0
1
0
0
0
1
1
Off
1
X
X
Off
X
X
X
Off
6
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