IRF1503L View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRF1503L

HEXFET® Power MOSFET

International Rectifier 

IRF1503S/IRF1503L

200

LIMITED BY PACKAGE

160

120

80

40

0

25

50

75

100

125

150

175

TC , Case Temperature ( °C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

2.0

ID = 240A

1.5

1.0

0.5

V GS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ, Junction Temperature

( °C)

Fig 10. Normalized On-Resistance

Vs. Temperature

1

D = 0.50

0.20

0.1

0.10

0.05

0.02

0.01

0.01

0.00001

P DM

SINGLE PULSE

(THERMAL RESPONSE)

t1

t2

Notes:

1. Duty factor D =

t1/ t 2

2. Peak T J = P DM x Z thJC + T C

0.0001

0.001

0.01

0.1

1

t1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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