IRF540ZSTRL View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRF540ZSTRL

HEXFET® Power MOSFET

International Rectifier 

IRF540Z/S/L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

e ––– 0.093 ––– V/°C Reference to 25°C, ID = 1mA

––– 21 26.5 mΩ VGS = 10V, ID = 22A

VGS(th)

Gate Threshold Voltage

2.0 ––– 4.0 V VDS = VGS, ID = 250µA

gfs

Forward Transconductance

36 ––– ––– V VDS = 25V, ID = 22A

IDSS

Drain-to-Source Leakage Current

––– ––– 20 µA VDS = 100V, VGS = 0V

––– ––– 250

VDS = 100V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 200 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -200

VGS = -20V

Qg

Total Gate Charge

––– 42 63

ID = 22A

Qgs

Qgd

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

–––

–––

9.7

15

–––

–––

e nC VDS = 80V

VGS = 10V

td(on)

Turn-On Delay Time

––– 15 –––

VDD = 50V

tr

Rise Time

––– 51 –––

ID = 22A

td(off)

tf

Turn-Off Delay Time

Fall Time

–––

–––

43

39

–––

–––

e ns RG = 12 Ω

VGS = 10V

LD

Internal Drain Inductance

––– 4.5 –––

Between lead,

D

LS

Internal Source Inductance

nH 6mm (0.25in.)

––– 7.5 –––

from package

G

Ciss

Coss

Crss

Coss

Coss

Coss eff.

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Output Capacitance

Effective Output Capacitance

––– 1770 –––

––– 180 –––

––– 100 –––

––– 730 –––

––– 110 –––

––– 170 –––

and center of die contact

S

VGS = 0V

VDS = 25V

pF ƒ = 1.0MHz

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

f VGS = 0V, VDS = 80V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 80V

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

––– ––– 36

MOSFET symbol

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

––– ––– 140

A showing the

integral reverse

––– ––– 1.3

––– 33 50

––– 41 62

e p-n junction diode.

V TJ = 25°C, IS = 22A, VGS = 0V

e ns TJ = 25°C, IF = 22A, VDD = 50V

nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

2

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