IRFB3077PBF(2005) View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRFB3077PBF
(Rev.:2005)

High Efficiency Synchronous Rectification in SMPS

International Rectifier 

IRFB3077PbF

+

‚

-



RG

D.U.T

+

Driver Gate Drive

P.W.

Period

D=

P.W.

Period

ƒ

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance

Current Transformer

-„ +

D.U.T. ISD Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. VDS Waveform Diode Recovery

dv/dt

• dv/dt controlled by RG

• Driver same type as D.U.T.

VDD

+

• ISD controlled by Duty Factor "D"

-

• D.U.T. - Device Under Test

Re-Applied

Voltage

Body Diode

IInndduuccttoorr CCuurrerennt t

Forward Drop

Ripple ≤ 5%

* VGS = 5V for Logic Level Devices

Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

* VGS=10V

VDD

ISD

V(BR)DSS

15V

tp

VDS

L

DRIVER

RG

2V0GVS

tp

D.U.T

IAS

0.01Ω

+

- VDD

A

Fig 22a. Unclamped Inductive Test Circuit

IAS

Fig 22b. Unclamped Inductive Waveforms

LD

VDS

+

VDD -

VGS

Pulse Width < 1µs

Duty Factor < 0.1%

D.U.T

Fig 23a. Switching Time Test Circuit

VDS

90%

10%

VGS

td(on) tr

td(off) tf

Fig 23b. Switching Time Waveforms

Id

Vds

Vgs

L

VCC

DUT

0

1K

Vgs(th)

Fig 24a. Gate Charge Test Circuit

www.irf.com

Qgs1 Qgs2 Qgd

Qgodr

Fig 24b. Gate Charge Waveform

7

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