PD - 97074A
IRFI4019H-117P
DIGITAL AUDIO MOSFET
Features
Integrated Half-Bridge Package
Reduces the Part Count by Half
Facilitates Better PCB Layout
Key Parameters Optimized for Class-D
Audio Amplifier Applications
Low RDS(ON) for Improved Efficiency
Low Qg and Qsw for Better THD and
Improved Efficiency
Low Qrr for Better THD and Lower EMI
Can Delivery up to 200W per Channel into
8Ω Load in Half-Bridge Configuration
Amplifier
Lead-Free Package
Key Parameters h
VDS
RDS(ON) typ. @ 10V
150
V
80
m:
Qg typ.
13
nC
Qsw typ.
4.1
nC
RG(int) typ.
2.5
Ω
TJ max
150
°C
D1
G1
S1/D2
G2
S2
TO-220 Full-Pak 5 PIN
Description
G1, G2
Gate
D1, D2
Drain
S1, S2
Source
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and
internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such
as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable
device for Class D audio amplifier applications.
Absolute Maximum Ratings h
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
150
V
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
EAS
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Single Pulse Avalanche Energyd
Power Dissipation f
Power Dissipation f
±20
8.7
A
6.2
34
77
mJ
18
W
7.2
Linear Derating Factor
0.15
W/°C
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Soldering Temperature, for 10 seconds
300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
10lbxin (1.1Nxm)
Thermal Resistance h
Parameter
RθJC
Junction-to-Case f
RθJA
Junction-to-Ambient f
Notes through are on page 2
www.irf.com
Typ.
–––
–––
Max.
6.9
65
Units
1
8/22/06