IRFI4019H-117P View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
IRFI4019H-117P Datasheet PDF : 7 Pages
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IRFI4019H-117P
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) h
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
150 ––– ––– V VGS = 0V, ID = 250µA
––– 0.19 ––– V/°C Reference to 25°C, ID = 1mA
––– 80 95 mΩ VGS = 10V, ID = 5.2A e
VGS(th)
∆VGS(th)/∆TJ
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
3.0 ––– 4.9
V VDS = VGS, ID = 50µA
––– -11 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 150V, VGS = 0V
––– ––– 250
VDS = 150V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs
Forward Transconductance
11 ––– ––– S VDS = 50V, ID = 5.2A
Qg
Total Gate Charge
––– 13 20
Qgs1
Pre-Vth Gate-to-Source Charge
––– 3.3 –––
VDS = 75V
Qgs2
Post-Vth Gate-to-Source Charge
––– 0.8 ––– nC VGS = 10V
Qgd
Gate-to-Drain Charge
––– 3.9 –––
ID = 5.2A
Qgodr
Gate Charge Overdrive
––– 5.0 –––
See Fig. 6 and 19
Qsw
Switch Charge (Qgs2 + Qgd)
––– 4.1 –––
RG(int)
Internal Gate Resistance
––– 2.5 ––– Ω
td(on)
Turn-On Delay Time
––– 7.0 –––
VDD = 75V, VGS = 10V e
tr
Rise Time
––– 6.6 –––
ID = 5.2A
td(off)
Turn-Off Delay Time
––– 13 ––– ns RG = 2.4Ω
tf
Fall Time
––– 3.1 –––
Ciss
Input Capacitance
––– 810 –––
VGS = 0V
Coss
Output Capacitance
––– 100 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 15 –––
ƒ = 1.0MHz,
See Fig.5
Coss
Effective Output Capacitance
––– 97 –––
VGS = 0V, VDS = 0V to 120V
LD
Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS
Internal Source Inductance
nH 6mm (0.25in.)
G
––– 7.5 –––
from package
S
and center of die contact
Diode Characteristics h
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) c
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
––– ––– 8.7
MOSFET symbol
––– ––– 34
A showing the
integral reverse
––– ––– 1.3
––– 57 86
––– 140 210
p-n junction diode.
V TJ = 25°C, IS = 5.2A, VGS = 0V e
ns TJ = 25°C, IF = 5.2A
nC di/dt = 100A/µs e
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 5.8mH, RG = 25Ω, IAS = 5.2A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
Rθ is measured at TJ of approximately 90°C.
Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
Specifications refer to single MosFET.
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