DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IRFI4019H-117P View Datasheet(PDF) - International Rectifier

Part Name
Description
Manufacturer
IRFI4019H-117P
IR
International Rectifier IR
IRFI4019H-117P Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRFI4019H-117P
100
10
TJ = 150°C
1
TJ = 25°C
VGS = 0V
0.1
0.0
0.5
1.0
1.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
10
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1msec 100µsec
10
DC 10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5.0
8
4.0
6
ID = 50µA
4
3.0
2
0
25
50
75
100
125
150
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
2.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
10
D = 0.50
0.20
1
0.10
0.05
0.1
0.01
0.001
1E-006
0.02
0.01
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci= τi/Ri
R2R2
τ2 τ2
R 3R 3
Ri (°C/W) τι (sec)
τCτ 1.508254 0.000814
τ3 τ3
2.154008 0.111589
3.237738 2.2891
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]