IRFPS35N50LPBF View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
IRFPS35N50LPBF Datasheet PDF : 8 Pages
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IRFPS35N50L, SiHFPS35N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
Note
a. Rth is measured at TJ approximately 90 °C.
TYP.
-
0.24
-
MAX.
40
-
0.28
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(on)
gfs
Ciss
Coss
Crss
Output Capacitance
Coss
Effective Output Capacitance
Effective Output Capacitance (Energy
Related)
Coss eff.
Coss eff. (ER)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
RG
td(on)
tr
td(off)
tf
Drain-Source Body Diode Characteristics
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 20 Ab
VDS = 50 V, ID = 20 Ab
500
-
-
V
-
0.12
-
V/°C
3.0
-
5.0
V
-
-
± 100 nA
-
-
50
µA
-
-
2.0 mA
-
0.125 0.145 Ω
18
-
-
S
VGS = 0 V,
-
VDS = 25 V,
-
f = 1.0 MHz, see fig. 5
-
VDS = 1.0 V , f = 1.0 MHz
-
VDS = 400 V , f = 1.0 MHz -
VGS = 0 V
-
VDS = 0 V to 400 Vc
-
-
VGS = 10 V
ID = 34 A, VDS = 400 V,
see fig. 7 and 13b
-
-
f = 1 MHz, open drain
-
-
VDD = 250 V, ID = 34 A,
-
RG = 1.2 Ω, see fig. 10b
-
-
5580
-
590
-
58
-
7290
-
pF
160
-
320
-
220
-
-
230
-
65
nC
-
110
1.1
-
Ω
24
-
100
-
ns
42
-
42
-
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
ISM
integral reverse
p - n junction diode
D
G
S
-
-
34
A
-
-
140
Body Diode Voltage
VSD
TJ = 25 °C, IS = 34 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 34 A
TJ = 125 °C, dI/dt = 100 A/µsb
-
170
250
ns
-
220 330
Body Diode Reverse Recovery Charge
Qrr
TJ = 25 °C, IS = 34 A, VGS = 0 Vb
TJ = 125 °C, dI/dt = 100 A/µsb
-
670 1010
µC
-
1500 2200
Reverse Recovery Current
IRRM
TJ = 25 °C
-
8.5
-
A
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 400 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS.
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Document Number: 91257
S-81368-Rev. A, 21-Jul-08
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