IRFPS35N50LPBF View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

Manufacturer

IRFPS35N50LPBF

Power MOSFET

Vishay Semiconductors 

IRFPS35N50L, SiHFPS35N50L

Vishay Siliconix

100000

10000

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

1000

100

Coss

Crss

10

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

30

25

20

15

10

5

0

0 100 200 300 400 500 600

VDS, Drain-to-Source Voltage (V)

Fig. 6 - Typical Output Capacitance Stored Energy

vs. VDS

20

ID = 34A

16

12

VDS = 400V

VDS = 250V

VDS = 100V

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

0

40

80 120 160 200 240

QG , Total Gate Charge (nC)

Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage

1000

100

TJ = 150° C

10

1

TJ = 25° C

VGS = 0 V

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD ,Source-to-Drain Voltage (V)

Fig. 8 - Typical Source Drain Diode Forward Voltage

www.vishay.com

4

Document Number: 91257

S-81368-Rev. A, 21-Jul-08

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