IRGPH40 View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRGPH40

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier 

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IRGPH40F

2400

V GE = 0V,

f = 1MHz

Cies = Cge + C gc , Cce SHORTED

2000

Cres = C gc

Coes = Cce + C gc

Cies

1600

1200

Coes

800

Cres

400

0

1

10

100

VCE , Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

20

VCE = 400V

IC = 17A

16

12

8

4

0

0

10

20

30

40

50

Q g , Total G ate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

4.8

VCC = 960V

VG E = 15V

TC = 25°C

IC = 17A

4.6

4.4

4.2

100

R G = 10 Ω

V GE = 15V

V CC = 960V

10

1

IC = 34A

IC = 17A

IC = 8.5A

4.0

0

10

20

30

40

50

60

R G , Gate Resistance (Ω )

W

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TC, C ase Tem perature (°C )

Fig. 10 - Typical Switching Losses vs.

Case Temperature

C-277

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