IRH9230 View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
IRH9230 Datasheet PDF : 4 Pages
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IRH9230 Device
Pre-Radiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
∆BVDSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Millerâ€) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
-200 — — V
— -0.10 — V/°C
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = -1.0 mA
— — 0.8
— — 0.92 Ω
VGS = -12V, ID = -4.1A „
VGS = -12V, ID = -6.5A
-2.0 — -4.0 V
2.5 — — S ( )
VDS = VGS, ID = -1.0 mA
VDS > -15V, IDS = -6.5A „
—
—
— -25
— -250
µA
VDS = 0.8 x Max. Rating,VGS = 0V
VDS = 0.8 x Max. Rating
VGS = 0V, TJ = 125°C
—
— -100 nA
— — 100
VGS = -20V
VGS = +20V
— — 35
— — 10 nC
VGS = -12V, ID = -6.5A
VDS = Max. Rating x 0.5
— — 25
— — 50
VDD = -50V, ID = -6.5A, RG = 7.5Ω
—
—
— 90
— 90
ns
— — 90
— 5.0 —
Measured from the Modified MOSFET
drain lead, 6mm (0.25 symbol showing the
in.) from package to internal inductances.
—
15 —
nH
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
— 900 —
— 250 — pF
— 45 —
VGS = 0V, VDS = -25V
f = 1.0 MHz
Source-Drain Diode Ratings and Characteristics
IS
ISM
VSD
trr
QRR
ton
Parameter
Continuous Source Current
(Body Diode)
Pulse Source Current
(Body Diode) Â
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Test Conditions
— — -6.5
Modified MOSFET symbol
showing the integral Reverse
——
-26
A
p-n junction rectifier.
— — -5.0 V
Tj = 25°C, IS = -6.5A, VGS = 0V „
— — 400 ns Tj = 25°C, IF = -6.5A, di/dt ≤ -100 A/µs
— — 4.0 µC
VDD ≤ -14V
„
Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min. Typ. Max. Units
—
—
—
30
1.67
—
K/W Â…
Test Conditions
Notes: See page 4
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