Pre-Irradiation
IRH9130
2000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
1600
Coss = Cds + Cgd
Ciss
1200
800
C oss
400
C rss
0
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = -11A
16
VDS = 80V
VDS = 50V
VDS = 20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
60
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150° C
10
TJ = 25° C
1
0.1
0.0
VGS = 0 V
1.0
2.0
3.0
4.0
5.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100us
10
1ms
TC = 25°C
TJ = 150 °C
Single Pulse
1
1
10
10ms
100
1000
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5