LE28F4001M View Datasheet(PDF) - SANYO -> Panasonic
Part Name
Description
Manufacturer
LE28F4001M Datasheet PDF : 14 Pages
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LE28F4001M, T, R-15/20
Product Identifier
Product identifier read is a mode provided so that applications can confirm that the device was manufactured by SANYO
Electric Co., Ltd. This mode can be accessed by both hardware and software operations. A ROM writer is normally used
with this hardware operation to recognize the correct algorithm for the SANYO LE28F4001 Series. We recommend that
user use the software operation for recognizing this device. The “Functional Logic” section describes the hardware
operation in detail. The manufacturer and device code are accessed in the same manner.
Decoupling Capacitors
Ceramic capacitors (0.1 µF) must be added between VCC and VSS for each device to assure stabile flash memory
operation.
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Ratings
Supply voltage
Input pin voltage
DQ pin voltage
A9 pin voltage
Power dissipation
VCC
VIN
VI/O
VA9
Pd max
–0.5 to +6.0
–0.5 to VCC + 0.5
–0.5 to VCC + 0.5
–0.5 to +14.0
600
Operating temperature
Topr
0 to +70
Storage temperature
Tstg
–65 to +150
Note: 1. Stresses greater than the above listed maximum values may result in damage to the device.
2. –1.0 to VCC + 1.0 V for pulse widths less than 20 ns.
3. –1.0 to VCC + 14.0 V for pulse widths less than 20 ns.
4. Ta = 25 °C
DC Recommended Operating Ranges at Ta = 0 to +70°C, VCC = 5 V ± 10%
Parameter
Supply voltage
Input low-level voltage
Input high-level voltage
Symbol
min
typ
VCC
4.5
5.0
VIL
VIH
2.0
Unit
Note
V
1
V
1, 2
V
1, 2
V
1, 3
mW
1, 4
°C
1
°C
1
max
Unit
5.5
V
0.8
V
V
DC Electrical Characteristics at Ta = 0 to +70°C, VCC = 5 V ± 10%
Parameter
Current drain during read
Current drain during write
TTL standby current
CMOS standby current
Input leakage current
Output leakage current
Output low-level voltage
Output high-level voltage
Symbol
ICCR
ICCW
ISB1
ISB2
ILI
ILO
VOL
VOH
Conditions
CE = OE = VIL, WE = VIH, all DQ pins open,
Address inputs = VIH or VIL, operating frequency =
1/tRC (minimum), VCC = VCC max
CE = WE = VIL, OE = VIH, VCC = VCC max
CE = VIH, VCC = VCC max
CE = VCC – 0.3 V, VCC = VCC max
VIN = VSS to VCC, VCC = VCC max
VIN = VSS to VCC, VCC = VCC max
IOL = 2.1 mA, VCC = VCC min
IOH = –400 µA, VCC = VCC min
min
typ
max
Unit
25
mA
40
mA
3
mA
20
µA
10
µA
10
µA
0.4
V
2.4
V
Input/Output Capacitances at Ta = 25°C, VCC = 5 V ± 10%, f = 1 MHz
I/O capacitance
Input capacitance
Parameter
Symbol
CDQ
CIN
VDQ = 0 V
VIN = 0 V
Conditions
max
Unit
12
pF
6
pF
Power on Timing
Parameter
Time from power on until first read operation
Time from power on until first write operation
Symbol
tPU-READ
tPU-WRITE
max
Unit
10
ms
10
ms
No. 5239-7/14
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