IS25LQ040(2012) View Datasheet(PDF) - Integrated Silicon Solution

Part Name

Description

Manufacturer

IS25LQ040
(Rev.:2012)

4 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface

Integrated Silicon Solution 

IS25LQ040

DEVICE OPERATION (CONTINUED)

READ COMMAND (READ DATA) OPERATION

The Read Data (READ) instruction is used to read

memory data of a IS25LQ040under normal mode

running up to 33 MHz.

The READ instruction code is transmitted via the Sl

line, followed by three address bytes (A23 - A0) of the

first memory location to be read. A total of 24 address

bits are shifted in, but only AMS (most significant

address) - A0 are decoded. The remaining bits (A23 –

AMS) are ignored. The first byte addressed can be at

any memory location. Upon completion, any data on

the Sl will be ignored. Refer to Table 13 for the related

Address Key.

The first byte data (D7 - D0) addressed is then shifted

out on the SO line, MSb first. A single byte of data, or

up to the whole memory array, can be read out in one

READ instruction. The address is automatically

incremented after each byte of data is shifted out. The

read operation can be terminated at any time by driving

CE# high (VIH) after the data comes out. When the

highest address of the devices is reached, the address

counter will roll over to the 000000h address, allowing

the entire memory to be read in one continuous READ

instruction.

If a Read Data instruction is issued while an Erase,

Program or Write cycle is in process (BUSY=1) the

instruction is ignored and will not have any effects on the

current cycle

Table 13. Address Key

Address

AN (AMS – A0)

Don't Care Bits

IS25LQ040

A19 - A0

A23 – A20

Figure 12. Read Data Sequence

Integrated Silicon Solution, Inc.- www.issi.com

Rev. A

17

09/13/2012

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