IS61LV5128 View Datasheet(PDF) - Integrated Silicon Solution

Part Name

Description

Manufacturer

IS61LV5128

512K x 8 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution 

IS61LV5128

ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameter

Value

Unit

VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.5 V

TBIAS

Temperature Under Bias

–55 to +125

°C

TSTG

Storage Temperature

–65 to +150

°C

PT

Power Dissipation

1.0

W

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-

nent damage to the device. This is a stress rating only and functional operation of the device at

these or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

ISSI ®

OPERATING RANGE

Range

Commercial

Industrial

Ambient Temperature

0°C to +70°C

–40°C to +85°C

10 ns

VCC

3.3V +10%, -5%

3.3V +10%, -5%

12 ns, 15 ns

VCC

3.3V ± 10%

3.3V ± 10%

CAPACITANCE(1,2)

Symbol Parameter

Conditions

Max.

CIN

Input Capacitance

VIN = 0V

6

CI/O

Input/Output Capacitance

VOUT = 0V

8

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.3V.

Unit

pF

pF

Integrated Silicon Solution, Inc. — 1-800-379-4774

3

Rev. B

07/16/01

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