IS64LV51216 View Datasheet(PDF) - Integrated Silicon Solution

Part Name

Description

Manufacturer

IS64LV51216

512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

Integrated Silicon Solution 

IS61LV51216

IS64LV51216

ISSI ®

READ CYCLE NO. 2(1,3)

1

tRC

ADDRESS

tAA

2

tOHA

OE

tDOE

CE

tLZOE

tHZOE

3

tLZCE

tACE

tHZCE

4

LB, UB

tBA

tLZB

tRC

tHZB

5

DOUT HIGH-Z

DATA VALID

VDD

Supply

Current

tPU

50%

Notes:

1. WE is HIGH for a Read Cycle.

2. The device is continuously selected. OE, CE, UB, or LB = VIL.

3. Address is valid prior to or coincident with CE LOW transition.

ICC

tPD

50%

6

ISB

UB_CEDR2.eps

7

8

9

10

11

12

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

7

Rev. D

12/06/05

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