IS61LV6432 View Datasheet(PDF) - Integrated Circuit Solution Inc
Part Name
Description
Manufacturer
IS61LV6432 Datasheet PDF : 16 Pages
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IS61LV6432
INTERLEAVED BURST ADDRESS TABLE (MODE = VCCQ or No Connect)
External Address
A1 A0
1st Burst Address
A1 A0
2nd Burst Address
A1 A0
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = GNDQ)
0,0
A1’, A0’ = 1,1
0,1
1,0
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
TBIAS Temperature Under Bias
–10 to +85
°C
TSTG
Storage Temperature
–55 to +150 °C
PD
Power Dissipation
1.8
W
IOUT
Output Current (per I/O)
100
mA
VIN, VOUT Voltage Relative to GND for I/O Pins
–0.5 to VCCQ + 0.3 V
VIN
Voltage Relative to GND for
–0.5 to 4.6
V
for Address and Control Inputs
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static
voltages or electric fields; however, precautions may be taken to avoid application of any
voltage higher than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
Integrated Circuit Solution Inc.
5
SSR005-0B
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