IS65C256AL View Datasheet(PDF) - Integrated Silicon Solution

Part Name

Description

Manufacturer

IS65C256AL

32K x 8 LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS65C256AL

IS62C256AL

DATA RETENTION SWITCHING CHARACTERISTICS

Symbol Parameter

VDR VDD for Data Retention

IDR Data Retention Current

Test Condition

See Data Retention Waveform

VDD = 2.0V, CE ≥ VDD – 0.2V

VIN ≥ VDD – 0.2V, or VIN ≤ VSS + 0.2V

tSDR Data Retention Setup Time See Data Retention Waveform

tRDR Recovery Time

See Data Retention Waveform

Note:

1. Typical Values are measured at VDD = 5V, TA = 25oC and not 100% tested.

Com.

Ind.

Auto.

DATA RETENTION WAVEFORM (CE Controlled)

VDD

4.5V

tSDR

Data Retention Mode

2.2V

VDR

CE

GND

CE ≥ VDD - 0.2V

ISSI ®

Min. Typ. Max. Unit

2.0

5.5 V

——

——

——

15 µA

20

50

0

— ns

tRC

— ns

tRDR

Integrated Silicon Solution, Inc. — 1-800-379-4774

9

Rev. A

03/17/06

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