IS62C1024L View Datasheet(PDF) - Integrated Silicon Solution

Part Name

Description

Manufacturer

IS62C1024L

128K x 8 LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62C1024L

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

VTERM

TSTG

PT

IOUT

Parameter

Terminal Voltage with Respect to GND

Storage Temperature

Power Dissipation

DC Output Current (LOW)

Value

Unit

–0.5 to +7.0

V

–65 to +150

°C

1.5

W

20

mA

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of the

device at these or any other conditions above those indicated in the operational sections

of this specification is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect reliability.

ISSI ®

CAPACITANCE(1,2)

Symbol

CIN

COUT

Parameter

Input Capacitance

Output Capacitance

Conditions

VIN = 0V

VOUT = 0V

Max.

Unit

6

pF

8

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

VOH

Output HIGH Voltage

VOL

Output LOW Voltage

VIH

Input HIGH Voltage

VIL

Input LOW Voltage(1)

ILI

Input Leakage

Test Conditions

VDD = Min., IOH = –1.0 mA

VDD = Min., IOL = 2.1 mA

GND ≤ VIN ≤ VDD

ILO

Output Leakage

GND ≤ VOUT ≤ VDD

Notes:

1. VIL = –3.0V for pulse width less than 10 ns.

Com.

Ind.

Com.

Ind.

Min.

2.4

—

2.2

–0.3

–2

–10

–2

–10

Max.

—

0.4

VDD + 0.5

0.8

2

10

2

10

Unit

V

V

V

V

µA

µA

Integrated Silicon Solution, Inc. — 1-800-379-4774

3

Rev. E

11/26/03

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