IS62LV256AL View Datasheet(PDF) - Integrated Silicon Solution

Part Name

Description

Manufacturer

IS62LV256AL

32K x 8 LOW VOLTAGE CMOS STATIC RAM

Integrated Silicon Solution 

IS65LV256AL

IS62LV256AL

READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)

    -20 ns     -45 ns            

Symbol

Parameter

Min. Max.

Min. Max. Unit

trc

Read Cycle Time

20 —

45 —

ns

taa

Address Access Time

— 20

— 45

ns

toha

Output Hold Time

2—

2—

ns

tace

CE Access Time

— 20

— 45

ns

tdoe

OE Access Time

— 10

— 25

ns

tlzoe(2)

OE to Low-Z Output

0—

0—

ns

thzoe(2)

OE to High-Z Output

—9

0 20

ns

tlzce(2)

CE to Low-Z Output

3—

3—

ns

thzce(2)

CE to High-Z Output

—9

0 20

ns

tpu(3)

CE to Power-Up

0—

0—

ns

tpd(3)

CE to Power-Down

— 18

— 30

ns

Notes:

1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and

output loading specified in Figure 1.

2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.

3. Not 100% tested.

AC TEST CONDITIONS

Parameter

Input Pulse Level

Input Rise and Fall Times

Input and Output Timing

and Reference Levels

Output Load

Unit

0V to 3.0V

3 ns

1.5V

See Figures 1 and 2

AC TEST LOADS

3.3V

635 Ω

OUTPUT

30 pF

Including

jig and

scope

Figure 1.

702 Ω

3.3V

635 Ω

OUTPUT

5 pF

Including

jig and

scope

Figure 2.

702 Ω

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

5

Rev. C

05/09/12

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