IS62LV256AL View Datasheet(PDF) - Integrated Silicon Solution

Part Name

Description

Manufacturer

IS62LV256AL

32K x 8 LOW VOLTAGE CMOS STATIC RAM

Integrated Silicon Solution 

IS65LV256AL

IS62LV256AL

DATA RETENTION SWITCHING CHARACTERISTICS

Symbol Parameter

Vdr Vdd for Data Retention

Idr Data Retention Current

Test Condition

See Data Retention Waveform

Vdd = 2.0V, CE ≥ Vdd – 0.2V

Vin ≥ Vdd – 0.2V, or Vin ≤ Vss + 0.2V

tsdr Data Retention Setup Time See Data Retention Waveform

trdr Recovery Time

See Data Retention Waveform

Note:

1. Typical Values are measured at Vdd = 3.3V, Ta = 25oC and not 100% tested.

Com.

Ind.

Auto.

typ.(1)

DATA RETENTION WAVEFORM (CE Controlled)

VDD

tSDR

Data Retention Mode

VDR

CE

GND

CE ≥ VDD - 0.2V

Min. Typ.

2.0

——

——

——

2

0

trc

Max. Unit

3.6 V

15 µA

20

50

— ns

— ns

tRDR

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

9

Rev. C

05/09/12

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