IS93C56A(2006) View Datasheet(PDF) - Integrated Silicon Solution
Part Name
Description
Manufacturer
IS93C56A Datasheet PDF : 16 Pages
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IS93C56A
IS93C66A
ISSI ®
DC ELECTRICAL CHARACTERISTICS
TA = –40°C to +85°C for Industrial and –40°C to +125°C for Automotive.
Symbol Parameter
Test Conditions
Vcc
Min.
VOL2
Output LOW Voltage IOL = 100 µA
1.8V to 2.7V
—
VOL1
Output LOW Voltage IOL = 2.1mA
2.7V to 5.5V
—
VOH2
Output HIGH Voltage IOH = –100 µA
1.8V to 2.7V VCC – 0.2
VOH1
Output HIGH Voltage IOH = –400 µA
2.7V to 5.5V
2.4
VIH
Input HIGH Voltage
1.8V to 5.5V 0.7XVCC
VIL
Input LOW Voltage
1.8V to 5.5V
–0.3
ILI
Input Leakage
VIN = 0V to VCC (CS, SK,DIN,ORG)
0
ILO
Output Leakage
VOUT = 0V to VCC, CS = 0V
0
Notes:
Automotive grade devices in this table are tested with Vcc = 2.5V to 5.5V. An operation with Vcc <2.5V is not specified.
Max. Unit
0.2
V
0.4
V
—
V
—
V
VCC+1 V
0.2XVCC V
2.5
µA
2.5
µA
POWER SUPPLY CHARACTERISTICS
TA = –40°C to +85°C for Industrial, –40°C to +125°C for Automotive.
Symbol Parameter
ICC1 Vcc Read Supply Current
ICC2 Vcc Write Supply Current
ISB1 Standby Current
Test Conditions
CS = VIH, SK = 1 MHz, CMOS input levels
CS = VIH, SK = 2 MHz, CMOS input levels
CS = VIH, SK = 2 MHz, CMOS input levels
CS = VIH, SK = 1 MHz, CMOS input levels
CS = VIH, SK = 2 MHz, CMOS input levels
CS = VIH, SK = 2 MHz, CMOS input levels
CS = GND, SK = GND,
ORG = VCC or Floating (x16)
ISB2 Standby Current
CS = GND, SK = GND,
ORG = GND (x8)
Vcc
1.8V
2.5V
5.0V
1.8V
2.5V
5.0V
1.8V
2.5V
5.0V
1.8V
2.5V
5.0V
Min. Typ. Max. Unit
— 0.1 1 mA
— 0.2 1 mA
— 0.5 2 mA
— 0.5 1 mA
— 1 2 mA
— 2 3 mA
— 0.1 1 µA
— 0.1 2 µA
— 0.2 4 µA
— 6 10 µA
— 6 10 µA
— 10 15 µA
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
05/02/06
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