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ISPGDX160V-9Q208I View Datasheet(PDF) - Lattice Semiconductor

Part Name
Description
Manufacturer
ISPGDX160V-9Q208I
Lattice
Lattice Semiconductor Lattice
ISPGDX160V-9Q208I Datasheet PDF : 36 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Specifications ispGDX160VA
Switching Test Conditions
Figure 8. Test Load
Input Pulse Levels
GND to VCCIO(MIN)
Input Rise and Fall Time
< 1.5ns 10% to 90%
VCCIO
Input Timing Reference Levels
VCCIO(MIN)/2
Output Timing Reference Levels
VCCIO(MIN)/2
Output Load
See Figure 8
S 3-state levels are measured 0.5V from steady-state active level.
E Output Load Conditions (See Figure 8)
IC D TEST CONDITION
A
V Active High
E B
Active Low
Active High to Z
E U C at VOH-0.5V
Active Low to Z
at VOL+0.5V
D IN D SlowSlew
3.3V
2.5V
R1 R2 R1 R2 CL
153
153
134
134
156
156
144
144
35pF
35pF
35pF
1341445pF
1531565pF
∞ ∞ ∞ ∞ 35pF
Table 2-0004A/gdx160va
Device
Output
R1
Test
Point
R2
CL*
*CL includes Test Fixture and Probe Capacitance.
0213D
T T DC Electrical Characteristics for 3.3V Range1
Over Recommended Operating Conditions
C N SYMBOL
PARAMETER
VCCIO I/O Reference Voltage
E VIL
Input Low Voltage
O VIH
Input High Voltage
L VOL
Output Low Voltage
E C VOH
Output High Voltage
S DIS 1. I/O voltage configuration must be set to VCC.
CONDITION
VOH VOUT or VOUT VOL (MAX)
VOH VOUT or VOUT VOL(MAX)
VCC = VCC (MIN)
VCC = VCC (MIN)
IOL = +100µA
IOL = +24mA
IOH = -100µA
IOH = -12mA
MIN.
3.0
-0.3
2.0
2.8
2.4
TYP.
MAX. UNITS
3.6
V
0.8
V
5.25 V
0.2
V
0.55 V
V
V
Table 2-0007/gdx160va
9

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