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ISPGDX160V-9Q208I View Datasheet(PDF) - Lattice Semiconductor

Part Name
Description
Manufacturer
ISPGDX160V-9Q208I
Lattice
Lattice Semiconductor Lattice
ISPGDX160V-9Q208I Datasheet PDF : 36 Pages
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Specifications ispGDX160VA
DC Electrical Characteristics for 2.5V Range1
Over Recommended Operating Conditions
SYMBOL
PARAMETER
CONDITION
MIN. TYP. MAX. UNITS
VCCIO I/O Reference Voltage
VIL
Input Low Voltage
VOH(MIN) VOUT or VOUT VOL(MAX)
VIH
Input High Voltage
VOH(MIN) VOUT or VOUT VOL(MAX)
S VOL
Output Low Voltage
VCCIO=MIN, IOL = 100µA
VCCIO=MIN, IOL = 8mA
E VOH
Output High Voltage
VCCIO=MIN, IOH = -100µA
VCCIO=MIN, IOH = -8mA
1. I/O voltage configuration must be set to VCCIO.
2.3
2.7
V
-0.3
0.7
V
1.7
– 5.25 V
0.2
V
0.6
V
2.1
V
1.8
V
2.5V/gdx160va
IC DC Electrical Characteristics
D Over Recommended Operating Conditions
SYMBOL
PARAMETER
V E IIL
Input or I/O Low Leakage Current
E IIH
Input or I/O High Leakage Current
U IPU
D IBHLS
IN IBHHS
IBHLO
T IBHHO
T IBHT
IOS1
C N ICCQ4
E ICC
I/O Active Pullup Current
Bus Hold Low Sustaining Current
Bus Hold High Sustaining Current
Bus Hold Low Overdrive Current
Bus Hold High Overdrive Current
Bus Hold Trip Points
Output Short Circuit Current
Quiescent Power Supply Current
Dynamic Power Supply Current
per Input Switching
CONDITION
0V VIN VIL (MAX)
(VCCIO-0.2) VIN VCCIO
VCCIO VIN 5.25V
0V VIN VIL (MAX)
VIN = VIL (MAX)
VIN = VIH (MIN)
0V VIN VCCIO
0V VIN VCCIO
VCC = 3.3V, VOUT = 0.5V, TA = 25°C
VIL = 0.5V, VIH = VCC
One input toggling at 50% duty cycle,
outputs open.
MIN.
40
-40
VIL
TYP.2 MAX.
-10
10
50
– -200
550
– -550
VIH
– -250
16.5 –
See –
Note 3
UNITS
µA
µA
µA
µA
µA
µA
µA
µA
V
mA
mA
mA/
MHz
O ICONT5
Maximum Continuous I/O Pin Sink
Current Through Any GND Pin
160 mA
L 1. One output at a time for a maximum of one second. VOUT = 0.5V was selected to avoid test problems by
E C tester ground degradation. Characterized, but not 100% tested.
DC Char_gdx160va
2. Typical values are at VCC = 3.3V and TA = 25°C.
3. ICC / MHz = (0.003 x I/O cell fanout) + 0.029.
S IS e.g. An input driving four I/O cells at 40MHz results in a dynamic ICC of approximately ((0.003 x 4) + 0.029) x 40 = 1.64mA.
4. For a typical application with 50% of I/O pins used as inputs, 50% used as outputs or bi-directionals.
D 5. This parameter limits the total current sinking of I/O pins surrounding the nearest GND pin.
10

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