10B1 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
10B1 Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
ITAxxB1
Table 1.
Symbol
Absolute ratings (Tamb = 25 °C)
Parameter
Value
Unit
PPP Peak pulse power (8/20 µs)(1)
IPP Peak pulse current (8/20 µs)(1)
I2t Wire I2t value(1)
Tj initial = Tamb
Tj initial = Tamb
300
W
40
A
0.6
A2s
Tj Maximum operating junction temperature
125
°C
Tstg Storage temperature range
-55 to +150
°C
TL Maximum lead temperature for soldering during 10 s at 5 mm for case
260
°C
1. For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit
caused by the wire melting.
Table 2.
Symbol
Electrical characteristics (Tamb = 25 °C)
Parameter
VRM
VBR
VCL
IRM
IPP
αT
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current
Peak pulse current
Voltage temperature coefficient
I
IPP
IRM
V
VRM VCL
VBR
C Capacitance
Order code
VBR
min.
(1)
@ IR
IRM @ VRM
max.
V
mA
µA
V
ITA6V5B1
6.5
1
10
5
ITA10B1
10
1
4
8
ITA18B1
18
1
4
15
ITA25B1
25
1
4
24
1. Betwenn I/O pin and ground.
2. Between two input pins at 0 V Bias, F = 1 MHz.
VCL @ IPP
8/20 µs
(1)
V
A
10
10
15
10
25
10
33
10
VCL @ IPP
αT
max. 8/20 µs max.
(1)
V
A 10-4/ °C
12
25
4
19
25
8
28
25
9
38
25
12
C
max.
(2)
pF
750
570
350
300
2/7
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