IXFR10N100F View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
Manufacturer
IXFR10N100F
IXYS CORPORATION
IXFR10N100F Datasheet PDF : 2 Pages
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HiPerFETTM Power MOSFETs
VDSS
ID25
ISOPLUS247TM
IXFR 12N100F 1000 V 10 A
F-Class: MegaHertz Switching
IXFR 10N100F 1000 V 9 A
(Electrically Isolated Back Surface)
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
Preliminary Data Sheet
RDS(on)
1.05 Ω
1.20 Ω
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
Maximum Ratings
12N100
10N100
12N100
10N100
12N100
10N100
1000
1000
±20
±30
10
9
48
40
12
10
31
1
5
V
V
V
V
A
A
A
A
A
A
mJ
J
V/ns
250
W
-40 ... +150
°C
150
°C
-40 ... +150
°C
300
°C
2500
V~
5
g
Test Conditions
VGS = 0 V, ID = 1mA
VDS = VGS, ID = 4mA
VGS = ±20 V, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = IT
Notes 1 & 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1000
V
3.0
5.5 V
±100 nA
TJ = 25°C
TJ = 125°C
12N100
10N100
50 µA
1.5 mA
1.05 Ω
1.2 Ω
ISOPLUS 247TM (IXFR)
G
(TAB)
D
Isolated back surface*
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z RF capable MOSFETs
z Double metal process for low gate
resistance
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
z Fast intrinsic rectifier
Applications
z DC-DC converters
z Switched-mode and resonant-mode
power supplies, >500kHz switching
z DC choppers
z 13.5 MHz industrial applications
z Pulse generation
z Laser drivers
z RF amplifiers
Advantages
z ISOPLUS 247TM package for clip or
spring mounting
z Space savings
z High power density
© 2002 IXYS All rights reserved
98934(7/02)
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