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IXGH50N60B4 View Datasheet(PDF) - IXYS CORPORATION

Part Name
Description
Manufacturer
IXGH50N60B4
IXYS
IXYS CORPORATION IXYS
IXGH50N60B4 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
IC = IC110, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
IC = IC110, VGE = 15V, VCE = 0.5 VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
E
off
Inductive Load, TJ = 25°C
IC = 36A, VGE = 15V
VCE = 400V, RG = 10Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 125°C
IC = 36A, VGE = 15V
VCE = 400V, RG = 10Ω
Note 2
RthJC
RthCS
TO-247
TO-220
Characteristic Values
Min.
Typ. Max.
IXGA50N60B4 IXGP50N60B4
IXGH50N60B4
TO-263 Outline
20
30
S
1860
pF
105
pF
60
pF
110
nC
13
nC
43
nC
37
ns
68
ns
0.93
mJ
330
ns
80
ns
1.00 1.80 mJ
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
31
ns
45
ns
0.94
mJ
280
ns
220
ns
1.90
mJ
0.43 °C/W
0.21
°C/W
0.50
°C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
TO-220 Outline
TO-247 Outline
123
P
e
Terminals: 1 - Gate
2 - Collector
3 - Emitter
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
1 = Gate 2 = Collector
3 = EmPiinttse:r 1 - Gate
2 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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