IXGH50N60C2 View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
Manufacturer
IXGH50N60C2 Datasheet PDF : 5 Pages
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IXGH 50N60C2
IXGT 50N60C2
Fig. 7. Transconductance
70
60 TJ = 25ºC
125ºC
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180 200
I C - Amperes
Fig. 8. Dependence of Turn-Off
Energy on RG
3
2.7
TJ = 125ºC
VGE = 15V
2.4
VCE = 480V
IC = 80A
2.1
1.8
1.5
1.2
0.9
IC = 40A
0.6
0.3
IC = 20A
0
2
4
6
8 10 12 14 16 18
R G - Ohms
Fig. 9. Dependence of Turn-Off
Energy on Ic
2.2
2
RG = 2Ω
RG = 10Ω - - - -
1.8
VGE = 15V
1.6
VCE = 480V
1.4
1.2
1
TJ = 125ºC
0.8
0.6
TJ = 25ºC
0.4
0.2
0
20
30
40
50
60
70
80
I C - Amperes
Fig. 10. Dependence of Turn-Off
Energy on Tem perature
2.4
RG = 2Ω
2.1
RG = 10Ω - - - -
VGE = 15V
1.8
VCE = 480V
1.5
IC = 80A
1.2
0.9
IC = 40A
0.6
0.3
IC = 20A
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 11. Dependence of Turn-Off
Sw itching Tim e on RG
450
400
td(off)
tfi - - - - - -
350
TJ = 125ºC
VGE = 15V
300
VCE = 480V
250
Fig. 12. Dependence of Turn-Off
Sw itching Tim e on Ic
200
180
160
140
td(off)
tfi - - - - - -
RG = 2Ω
VGE = 15V
VCE = 480V
TJ = 125ºC
120
200
100
IC = 40A
IC = 20A
150
IC = 80A
80
100
60
TJ = 25ºC
50
2
4
6
8 10 12 14 16 18
R G - Ohms
IXYS reserves the right to change limits, test conditions, and dimensions.
40
20
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117
30
5,381,025
5,486,715
40
50
60
70
80
I C - Amperes
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
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